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A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure.

, , , , , и . IMSE, том 9022 из SPIE Proceedings, стр. 90220L. SPIE, (2014)

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High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage., , , , и . IMSE, стр. 14-17. Society for Imaging Science and Technology, (2017)A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure., , , , , и . IMSE, том 9022 из SPIE Proceedings, стр. 90220L. SPIE, (2014)A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack., , , , и . Sensors, Cameras, and Systems for Industrial and Scientific Applications, том 8659 из SPIE Proceedings, стр. 86590J. SPIE, (2013)Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light., , , и . Sensors, Cameras, and Systems for Industrial and Scientific Applications, том 8298 из SPIE Proceedings, стр. 82980M. SPIE, (2012)