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Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light.

, , , and . Sensors, Cameras, and Systems for Industrial and Scientific Applications, volume 8298 of SPIE Proceedings, page 82980M. SPIE, (2012)

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A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure., , , , , and . IMSE, volume 9022 of SPIE Proceedings, page 90220L. SPIE, (2014)A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack., , , , and . Sensors, Cameras, and Systems for Industrial and Scientific Applications, volume 8659 of SPIE Proceedings, page 86590J. SPIE, (2013)Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light., , , and . Sensors, Cameras, and Systems for Industrial and Scientific Applications, volume 8298 of SPIE Proceedings, page 82980M. SPIE, (2012)