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Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications.

, , , , , , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)

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Li Jin

Hong Jin

Hua Jing

Depu Jin

Xiufang Jin

 

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Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD., , , , , , , и . ICTA, стр. 51-52. IEEE, (2023)Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics., , , , , и . Sci. China Inf. Sci., (октября 2023)Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model., , и . ASICON, стр. 1-4. IEEE, (2019)Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling., , , , , и . ICICDT, стр. 1-4. IEEE, (2022)Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-5. IEEE, (2024)Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 85-88. IEEE, (2023)Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors., , , , , , и . ICICDT, стр. 127-130. IEEE, (2023)Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET., , , , , , , , , и 3 other автор(ы). IRPS, стр. 70. IEEE, (2024)