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RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design.

, , , , , and . ACM Great Lakes Symposium on VLSI, page 281-286. ACM, (2023)

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A Generalized Workflow for Creating Machine Learning-Powered Compact Models for Multi-State Devices., , , , , , and . IEEE Access, (2022)Investigation of ReRAM Variability on Flow-Based Edge Detection Computing Using HfO2-Based ReRAM Arrays., , , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 68 (7): 2900-2910 (2021)Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2021)Reducing the effect of parasitic capacitance on implantable passive resonant sensors., , , , , , , and . EMBC, page 1930-1933. IEEE, (2016)Design Considerations for Memristive Crossbar Physical Unclonable Functions., , , , , , and . ACM J. Emerg. Technol. Comput. Syst., 14 (1): 2:1-2:23 (2018)RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design., , , , , and . ACM Great Lakes Symposium on VLSI, page 281-286. ACM, (2023)Moving Towards Game-Changing Technology: Fabrication and Application of HfO2 RRAM for In-Memory Computing., , , , and . ISQED, page 1-7. IEEE, (2023)A Unified Hardware/Software Co-Design Framework for Neuromorphic Computing Devices and Applications., , , , and . ICRC, page 1-8. IEEE, (2017)A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment., , , , , , , and . ESSCIRC, page 117-120. IEEE, (2023)Robust RRAM-based In-Memory Computing in Light of Model Stability., , , , , , , , , and . IRPS, page 1-5. IEEE, (2021)