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The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory., , , , , , , , , и 4 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering., , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Design-Technology Space Exploration for Energy Efficient AiMC-Based Inference Acceleration., , , , , , , и . ISCAS, стр. 1-5. IEEE, (2021)Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP., , , , , , , , , и 2 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges., , , , , , , , , и 1 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Demonstration of crystalline IGZO transistor with high thermal stability for memory applications., , , , , , , , , и 3 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)A 22 nm, 1540 TOP/s/W, 12.1 TOP/s/mm2 in-Memory Analog Matrix-Vector-Multiplier for DNN Acceleration., , , , , , , и . CICC, стр. 1-2. IEEE, (2021)Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-3. IEEE, (2022)