Author of the publication

pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems.

J. Lee, D. Na, A. Kavala, H. Cho, J. Lee, M. Yang, E. Song, T. Kim, S. Lee, D. Jang, B. Chun, Y. Jo, S. Jung, D. Jung, C. ho Kim, D. Kang, T. Lee, B. Jeong, C. Yoon, D. Kang, S. Lee, J. Ihm, D. Byeon, J. Lee, S. Hwang, and J. Song. VLSI Circuits, page 1-2. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ky ng Kim

Die Artikelstruktur in passiven zweisprachigen Wörterbüchern Deutsch-Koreanisch: Konzeption zur Erstellung eines zweisprachigen Lernerwörterbuchs Deutsch-KoreanischK. Kim. Uni Heidelberg, (2008)

Taekwan Kim

Bongcheol Kim

Kim Gerber

Youngsang Kim

Other publications of authors with the same name

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.W. Jung, H. Kim, D. Kim, T. Kim, N. Lee, D. Shin, M. Kim, Y. Rho, H. Lee, Y. Hyun and 44 other author(s). ISSCC, page 236-237. IEEE, (2024)A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage.D. Na, J. Lee, S. Lee, H. Cho, J. Lee, M. Yang, E. Song, A. Kavala, T. Kim, D. Jang and 12 other author(s). IEEE J. Solid State Circuits, 56 (4): 1129-1140 (2021)A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface.T. Kim, A. Kavala, H. Kang, Y. Jo, J. Park, K. Kang, B. Chun, D. Shin, D. Jang, B. Jeong and 3 other author(s). A-SSCC, page 1-2. IEEE, (2021)A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.Y. Jo, A. Kavala, T. Kim, B. Chun, J. Park, T. Lee, J. Seo, M. Yang, T. Park, H. Kwon and 20 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems.J. Lee, D. Na, A. Kavala, H. Cho, J. Lee, M. Yang, E. Song, T. Kim, S. Lee, D. Jang and 16 other author(s). VLSI Circuits, page 1-2. IEEE, (2020)

BibSonomy

Disambiguation of "Kim, Tongsung"

Please choose a person to relate this publication to

Ky ng Kim

Taekwan Kim

Bongcheol Kim

Kim Gerber

Youngsang Kim

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Kim, Tongsung"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems.

Please choose a person to relate this publication to

Ky ng Kim

Taekwan Kim

Bongcheol Kim

Kim Gerber

Youngsang Kim

Other publications of authors with the same name

Disambiguation