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A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface.

, , , , , , , , , , , , and . A-SSCC, page 1-2. IEEE, (2021)

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A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage., , , , , , , , , and 12 other author(s). IEEE J. Solid State Circuits, 56 (4): 1129-1140 (2021)A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface., , , , , , , , , and 34 other author(s). ISSCC, page 426-428. IEEE, (2021)7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate., , , , , , , , , and 35 other author(s). ISSCC, page 138-139. IEEE, (2016)A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface., , , , , , , , , and 3 other author(s). A-SSCC, page 1-2. IEEE, (2021)11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory., , , , , , , , , and 34 other author(s). ISSCC, page 202-203. IEEE, (2017)A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface., , , , , , , , , and 24 other author(s). ISSCC, page 136-137. IEEE, (2022)A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems., , , , , , , , , and 16 other author(s). VLSI Circuits, page 1-2. IEEE, (2020)