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Impact of stress-induced backflow on full-chip electromigration risk assessment.

H. Haznedar, M. Gall, V. Zolotov, P. Ku, C. Oh, and R. Panda. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 25 (6): 1038-1046 (2006)

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Martin Gall

Helmut Gall

Werner Gall

Helmut Gall

Ernst Gall

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Impact of stress-induced backflow on full-chip electromigration risk assessment.H. Haznedar, M. Gall, V. Zolotov, P. Ku, C. Oh, and R. Panda. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 25 (6): 1038-1046 (2006)Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments.J. Warmuth, K. Giering, A. Lange, A. Clausner, S. Schlipf, G. Kurz, M. Otto, J. Paul, R. Jancke, A. Aal and 2 other author(s). ESSDERC, page 178-181. IEEE, (2018)RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.P. Srinivasan, F. Guarin, S. Syed, J. Jerome, W. Liu, S. Jain, D. Lederer, S. Moss, P. Colestock, A. Bandyopadhyay and 3 other author(s). IRPS, page 1-6. IEEE, (2021)RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.P. Srinivasan, J. Lestage, S. Syed, X. Hui, S. Moss, O. Restrepo, O. Gonzalez, Y. Chen, T. McKay, A. Bandyopadhyay and 5 other author(s). IRPS, page 1-6. IEEE, (2023)Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects.Z. Zhang, M. Kraatz, M. Hauschildt, S. Choi, A. Clausner, E. Zschech, and M. Gall. IRPS, page 1-5. IEEE, (2021)Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration.C. Sander, Y. Standke, S. Niese, R. Rosenkranz, A. Clausner, M. Gall, and E. Zschech. Microelectron. Reliab., 54 (9-10): 1959-1962 (2014)A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification.C. Oh, H. Haznedar, M. Gall, A. Grinshpon, V. Zolotov, P. Ku, and R. Panda. ISQED, page 232-237. IEEE Computer Society, (2004)Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling.M. Kraatz, C. Sander, A. Clausner, M. Hauschildt, Y. Standke, M. Gall, and E. Zschech. IRPS, page 4. IEEE, (2018)Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers.P. Srinivasan, O. Gonzalez, O. Restrepo, J. Lestage, S. Syed, W. Taylor, A. Bandyopadhyay, M. Gall, and S. Ludvik. IRPS, page 1-6. IEEE, (2024)Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal.Z. Wu, P. Wang, S. Choi, P. Justison, M. Gall, J. Cho, T. Hirokawa, Y. Bian, T. Houghton, V. Karra and 6 other author(s). OFC, page 1-3. IEEE, (2023)

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Disambiguation of "Gall, Martin"

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Impact of stress-induced backflow on full-chip electromigration risk assessment.

Please choose a person to relate this publication to

Martin Gall

Helmut Gall

Werner Gall

Helmut Gall

Ernst Gall

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Gall, Martin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of stress-induced backflow on full-chip electromigration risk assessment.

Please choose a person to relate this publication to

Martin Gall

Helmut Gall

Werner Gall

Helmut Gall

Ernst Gall

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
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Chicago
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Impact of stress-induced backflow on full-chip electromigration risk assessment.