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A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 379-380. IEEE, (2022)A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices., , , , , , , , , and 10 other author(s). ISSCC, page 1-3. IEEE, (2022)16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips., , , , , , , , , and 11 other author(s). ISSCC, page 250-252. IEEE, (2021)A 55nm 1-to-8 bit Configurable 6T SRAM based Computing-in-Memory Unit-Macro for CNN-based AI Edge Processors., , , , , , , , , and 6 other author(s). A-SSCC, page 217-218. IEEE, (2019)17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)NV-BNN: An Accurate Deep Convolutional Neural Network Based on Binary STT-MRAM for Adaptive AI Edge., , , , , , , , , and 1 other author(s). DAC, page 30. ACM, (2019)U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)CIMR-V: An End-to-End SRAM-based CIM Accelerator with RISC-V for AI Edge Device., , , , , , , and . ISCAS, page 1-5. IEEE, (2024)A nonvolatile look-up table using ReRAM for reconfigurable logic., , , , , , , , , and 7 other author(s). A-SSCC, page 133-136. IEEE, (2014)RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications., , , , , , , , and . VLSIC, page 76-. IEEE, (2015)