( en | de | ru )

 

Disambiguation of "Huang, Ru"

Author of the publication

copydeleteadd this publication to your clipboard
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer.

, , , , , , , , , and . NVMTS, page 1-3. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ru-Jin Huang

Ru Zhang

Ru Xie

Tomasz Ru

Ru Hao

 

Other publications of authors with the same name

A 0.39-mm2 Stacked Standard-CMOS Humidity Sensor Using a Charge-Redistribution Correlated Level Shifting Floating Inverter Amplifier and a VCO-Based Zoom CDC., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 59 (2): 435-448 (February 2024)Theory and verification of operator design methodology., , , , , and . Sci. China Inf. Sci., 55 (2): 480-490 (2012)Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration., , , , , and . Microelectron. Reliab., 43 (5): 707-711 (2003)PDNNet: PDN-Aware GNN-CNN Heterogeneous Network for Dynamic IR Drop Prediction., , , , , and . CoRR, (2024)MPCViT: Searching for Accurate and Efficient MPC-Friendly Vision Transformer with Heterogeneous Attention., , , , , , , and . ICCV, page 5029-5040. IEEE, (2023)Investigation of Positive Bias Temperature Instability in advanced FinFET nodes., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature., , , , , , and . IRPS, page 6. IEEE, (2024)Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies., , , , , , , and . IRPS, page 7. IEEE, (2022)Duty cycle shift under static/dynamic aging in 28nm HK-MG technology., , , , , , and . IRPS, page 7. IEEE, (2015)Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs., , , , , , and . IRPS, page 6-1. IEEE, (2018)