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A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.

, , , , , , , , , , and . IEEE J. Solid State Circuits, 58 (2): 332-344 (February 2023)

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24.1 A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psat in 28nm CMOS., , , , , , , , , and 1 other author(s). ISSCC, page 411-413. IEEE, (2024)A 110-160 GHz ASK Receiver with Isomorphic Low Noise Power Amplifier and Multi-Mode Interface in 28-nm CMOS., , , , , , , , , and 1 other author(s). A-SSCC, page 1-3. IEEE, (2023)A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 58 (2): 332-344 (February 2023)A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS., , , , , , , , and . CICC, page 1-2. IEEE, (2022)A D-Band ASK Transmitter with 50GHz RF Bandwidth and Multi-Mode Interface Implemented in 28nm CMOS., , , , , , and . A-SSCC, page 1-3. IEEE, (2023)A 1-27 GHz SiGe Low Noise Amplifier With 27-dB Peak Gain and 2.85±1.45 dB NF., , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 71 (5): 2629-2633 (May 2024)A -28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj., , , , , , , , , and . IEEE J. Solid State Circuits, 56 (10): 3077-3093 (2021)A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process., , , , , , and . Sci. China Inf. Sci., (2020)A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power., , , , , and . CICC, page 1-4. IEEE, (2019)An Ultra-Wideband Amplifier with A Novel Non- Distributed Butterfly Topology Achieving 2-250 GHz Bandwidth and 4.67 THz GBW in 130nm SiGe BiCMOS., , , , , , and . CICC, page 1-2. IEEE, (2023)