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A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.

J. Yu, J. Chen, P. Zhou, H. Li, Z. Wang, Z. Li, Z. Chen, P. Yan, D. Hou, H. Gao, and W. Hong. IEEE J. Solid State Circuits, 58 (2): 332-344 (February 2023)

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Debin Xia

Changbao Hou

Bo Hou

Lei Hou

Ming Hou

Other publications of authors with the same name

A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power.P. Zhou, J. Chen, P. Yan, Z. Chen, D. Hou, and W. Hong. CICC, page 1-4. IEEE, (2019)Silicon Based Millimeter Wave and THz ICs.J. Chen, W. Hong, H. Tang, P. Yan, L. Zhang, G. Yang, D. Hou, and K. Wu. IEICE Trans. Electron., 95-C (7): 1134-1140 (2012)A -28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj.P. Zhou, J. Chen, P. Yan, J. Yu, J. Hu, H. Dong, L. Wang, D. Hou, H. Gao, and W. Hong. IEEE J. Solid State Circuits, 56 (10): 3077-3093 (2021)A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process.P. Zhou, J. Chen, P. Yan, Z. Peng, D. Hou, Z. Chen, and W. Hong. Sci. China Inf. Sci., (2020)An Ultra-Wideband Amplifier with A Novel Non- Distributed Butterfly Topology Achieving 2-250 GHz Bandwidth and 4.67 THz GBW in 130nm SiGe BiCMOS.D. Tang, Z. Li, J. Chen, P. Zhou, Z. Chen, D. Hou, and W. Hong. CICC, page 1-2. IEEE, (2023)A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications.J. He, Y. Xiong, J. Li, D. Hou, S. Hu, D. Yan, M. Arasu, and Y. Zhang. ISIC, page 296-299. IEEE, (2014)A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.J. Yu, J. Chen, P. Zhou, H. Li, Z. Wang, Z. Li, Z. Chen, P. Yan, D. Hou, H. Gao and 1 other author(s). IEEE J. Solid State Circuits, 58 (2): 332-344 (February 2023)A 1-27 GHz SiGe Low Noise Amplifier With 27-dB Peak Gain and 2.85±1.45 dB NF.Z. Wang, J. Chen, D. Hou, P. Zhou, Z. Chen, L. Wang, X. Xu, and W. Hong. IEEE Trans. Circuits Syst. II Express Briefs, 71 (5): 2629-2633 (May 2024)Towards 6G wireless communication networks: vision, enabling technologies, and new paradigm shifts.X. You, C. Wang, J. Huang, X. Gao, Z. Zhang, M. Wang, Y. Huang, C. Zhang, Y. Jiang, J. Wang and 40 other author(s). Sci. China Inf. Sci., (2021)A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication.H. Li, J. Chen, D. Hou, Z. Li, Z. Wang, and W. Hong. IEEE Trans. Circuits Syst. II Express Briefs, 68 (8): 2770-2774 (2021)

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Disambiguation of "Hou, Debin"

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A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.

Please choose a person to relate this publication to

Debin Xia

Changbao Hou

Bo Hou

Lei Hou

Ming Hou

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hou, Debin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.

Please choose a person to relate this publication to

Debin Xia

Changbao Hou

Bo Hou

Lei Hou

Ming Hou

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.