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New fast distributed thermal model for analysis of GaN based power devices.

, , , , , и . ESSDERC, стр. 172-175. IEEE, (2016)

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Steve Völler

Steve Tonah

Steve Pasek

Steve Blechschmidt

Mario Stoffels

 

Другие публикации лиц с тем же именем

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation., , , , , , , и . Microelectron. Reliab., (2017)Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs., , , , , , , , и . Microelectron. Reliab., (2018)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-10. IEEE, (2019)New fast distributed thermal model for analysis of GaN based power devices., , , , , и . ESSDERC, стр. 172-175. IEEE, (2016)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 377-380. IEEE, (2014)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate., , , , , , , , , и . Microelectron. Reliab., (2016)Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs., , , , , , , , и . IRPS, стр. 6. IEEE, (2015)