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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga, E. Fabris, M. Meneghini, E. Zanoni, G. Meneghesso, J. Priesol, and A. Satka. IRPS, page 1-10. IEEE, (2019)

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Steve Völler

Steve Tonah

Steve Pasek

Steve Blechschmidt

Felix Stoffels

Other publications of authors with the same name

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.A. Chvála, J. Marek, P. Pribytny, A. Satka, S. Stoffels, N. Posthuma, S. Decoutere, and D. Donoval. Microelectron. Reliab., (2017)Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.M. Borga, M. Meneghini, S. Stoffels, M. Hove, M. Zhao, X. Li, S. Decoutere, E. Zanoni, and G. Meneghesso. Microelectron. Reliab., (2018)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T. Wu, M. Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni. Microelectron. Reliab., (2016)Breakdown investigation in GaN-based MIS-HEMT devices.F. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)New fast distributed thermal model for analysis of GaN based power devices.V. Sodan, F. Maggioni, H. Oprins, S. Stoffels, M. Baelmans, and I. Wolf. ESSDERC, page 172-175. IEEE, (2016)Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.T. Wu, D. Marcon, B. Jaeger, M. Hove, B. Bakeroot, S. Stoffels, G. Groeseneken, S. Decoutere, and R. Roelofs. IRPS, page 6. IEEE, (2015)

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Disambiguation of "Stoffels, Steve"

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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Please choose a person to relate this publication to

Steve Völler

Steve Tonah

Steve Pasek

Steve Blechschmidt

Felix Stoffels

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Stoffels, Steve"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Please choose a person to relate this publication to

Steve Völler

Steve Tonah

Steve Pasek

Steve Blechschmidt

Felix Stoffels

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.