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Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage.

N. Kashio, T. Hoshi, K. Kurishima, M. Ida, и H. Matsuzaki. IEICE Trans. Electron., 99-C (5): 522-527 (2016)

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Minoru Uchiyama

Minoru Toyoda

Alexander Idaszewski

Hicham Idabal

Makoto Ida

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