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New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design., , , , , и . NEWCAS, стр. 1-4. IEEE, (2019)A 1.2V 20 dBm 60 GHz power amplifier with 32.4 dB Gain and 20 % Peak PAE in 65nm CMOS., , , , и . ESSCIRC, стр. 175-178. IEEE, (2014)2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC., , , , и . ISSCC, стр. 1-3. IEEE, (2015)Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI., , , и . ICECS, стр. 1-4. IEEE, (2023)A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS., , , , и . ISSCC, стр. 428-429. IEEE, (2010)A 12 Gb/s 64QAM and OFDM compatible millimeter-wave communication link using a novel plastic waveguide design., , , , , , , и . RWS, стр. 250-252. IEEE, (2018)20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13µm technology., , и . ISCAS (3), стр. 2675-2678. IEEE, (2005)A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications., , , , и . SBCCI, стр. 1-4. IEEE, (2012)A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications., , , , , , , , , и 5 other автор(ы). ISSCC, стр. 162-164. IEEE, (2011)A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI., , , , , , , , и . IEEE J. Solid State Circuits, 45 (7): 1286-1294 (2010)