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Charge-injection photogate pixel fabricated in CMOS silicon-on-insulator technology., , and . Int. J. Circuit Theory Appl., 37 (2): 179-192 (2009)Highly sensitive UV-enhanced linear CMOS photosensor., , , and . ESSCIRC, page 118-121. IEEE, (2008)MOS-Capacitor based CMOS time-compression photogate pixel for time-of-flight imaging., , and . ESSCIRC, page 340-343. IEEE, (2007)Double modified internal gate (MIG) pixel for fluorescence imaging applications., , , , and . ECCTD, page 9-12. IEEE, (2009)Low-noise and large-area CMOS SPADs with timing response free from slow tails., , , , , , , , , and 1 other author(s). ESSDERC, page 230-233. IEEE, (2012)Toward a single-pixel near-infrared low-resolution 2D image reconstruction strategy., , , , , and . CCE, page 1-6. IEEE, (2021)2D NIR-SPI spatial resolution evaluation under scattering condition., , , , and . CCE, page 1-6. IEEE, (2022)Speed considerations for LDPD based time-of-flight CMOS 3D image sensors., , , , , , , , , and . ESSCIRC, page 299-302. IEEE, (2013)Large full-well capacity stitched CMOS image sensor for high temperature applications., , , , and . ESSCIRC, page 130-133. IEEE, (2010)Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors., , , , , and . ESSCIRC, page 200-203. IEEE, (2009)