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Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology., , и . ICICDT, стр. 1-4. IEEE, (2015)Novel back-biased UTBB lateral SCR for FDSOI ESD protections., , , , , и . ESSDERC, стр. 222-225. IEEE, (2013)Novel AlGaN/GaN omega-FinFETs with excellent device performances., , , , , , , , и . ESSDERC, стр. 323-326. IEEE, (2016)Thin-Film FD-SOI BIMOS Topologies for ESD Protection., , , и . IRPS, стр. 1-5. IEEE, (2019)Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications., , , , , и . ESSDERC, стр. 74-77. IEEE, (2018)Low-frequency noise in bare SOI wafers: Experiments and model., , , и . ESSDERC, стр. 286-289. IEEE, (2015)Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications., , , и . ESSDERC, стр. 134-137. IEEE, (2014)Z2-FET used as 1-transistor high-speed DRAM., , , и . ESSDERC, стр. 197-200. IEEE, (2012)Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes., , , , и . ESSDERC, стр. 210-213. IEEE, (2016)Sharp-switching Z2-FET device in 14 nm FDSOI technology., , , , и . ESSDERC, стр. 250-253. IEEE, (2015)