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Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.

, , , and . Microelectron. Reliab., 41 (6): 855-860 (2001)

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Ultra low power and high performance nanoelectronic devices.. ASICON, page 1049-1052. IEEE, (2017)The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs., , , and . Microelectron. Reliab., 45 (9-11): 1386-1389 (2005)In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications., , , , , and . ESSDERC, page 257-260. IEEE, (2022)Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K., , , , , and . IRPS, page 1-4. IEEE, (2023)Status and trends in Nanoelectronic devices for the ultimate integration of ICs.. ASICON, page 1-4. IEEE, (2021)Nanoscale Devices for the end of the Roadmap.. ASICON, page 1-4. IEEE, (2019)0.25 μm SOI technologies performance for low-power radio-frequency applications., , , , , , and . ICECS, page 45-48. IEEE, (2000)New parameter extraction method based on split C-V for FDSOI MOSFETs., , , , , , and . ESSDERC, page 217-220. IEEE, (2012)Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs., , , and . Microelectron. Reliab., 49 (9-11): 1018-1023 (2009)Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors., , , and . Microelectron. Reliab., 41 (6): 855-860 (2001)