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Disambiguation of "Haendler, Sébastien"

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Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.

, , , and . Microelectron. Reliab., 41 (6): 855-860 (2001)

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Sébastien Beyou

Sébastien Tixeuil

Sébastien Lallé

Sébastien Carcanague

Sébastien Choplin

 

Other publications of authors with the same name

6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology., , , , and . ICICDT, page 89-92. IEEE, (2013)Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs., , , , , and . ESSDERC, page 214-217. IEEE, (2014)Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies., , , , , , , and . ICM, page 1-4. IEEE, (2017)0.25 μm SOI technologies performance for low-power radio-frequency applications., , , , , , and . ICECS, page 45-48. IEEE, (2000)Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs., , , , , , , and . ESSDERC, page 334-337. IEEE, (2012)Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below., , , , , , , , , and 21 other author(s). ESSCIRC, page 88-91. IEEE, (2009)28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications., , , , , and . ESSDERC, page 7-10. IEEE, (2019)Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors., , , , , , and . ESSDERC, page 373-376. IEEE, (2014)Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control., , , , , and . ESSCIRC, page 415-418. IEEE, (2013)Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology., , , , , , , , , and 1 other author(s). DTIS, page 1-5. IEEE, (2021)