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High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications., , , , , and . BCICTS, page 1-6. IEEE, (2019)256 GBd Barium-Titanate-on-SiN Mach-Zehnder Modulator., , , , , , , , , and 5 other author(s). OFC, page 1-3. IEEE, (2024)200 Gbit/s Barium Titanate Modulator Using Weakly Guided Plasmonic Modes., , , , , , , , , and 2 other author(s). OFC, page 1-3. IEEE, (2023)Monolithic Integration of III -V on silicon for photonic and electronic applications., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2018)Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing., , , , , , , and . ESSDERC, page 106-109. IEEE, (2019)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , and . ESSDERC, page 166-169. IEEE, (2018)InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance., , , , and . ESSDERC, page 162-165. IEEE, (2018)