Author of the publication

TiAl gate stacks.

H. Yang, L. Qi, Y. Zhang, B. Tang, Q. Liu, H. Xu, X. Ma, X. Wang, Y. Li, H. Yin, J. Li, H. Zhu, C. Zhao, W. Wang, and T. Ye. Sci. China Inf. Sci., 63 (2): 129403 (2020)

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Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Qinan Yin

Other publications of authors with the same name

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.L. Zhou, Z. Zhang, H. Yang, Z. Ji, Q. Liu, Q. Zhang, E. Simoen, H. Yin, J. Luo, A. Du and 2 other author(s). IRPS, page 1-7. IEEE, (2021)Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.H. Yang, L. Qi, Y. Zhang, B. Tang, Q. Liu, H. Xu, X. Ma, X. Wang, Y. Li, H. Yin and 5 other author(s). Sci. China Inf. Sci., 63 (2): 129403 (2020)Investigation on Contacts Thermal Stability for 3D Sequential Integration.S. Mao, J. Liu, Y. Wang, W. Liu, Y. Hu, H. Cui, R. Zhang, H. Liu, Z. Wang, N. Zhou and 10 other author(s). IRPS, page 37-1. IEEE, (2022)Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.Z. Gao, T. Xin, C. Liu, Y. Xu, Y. Wang, Y. Zheng, R. Wang, X. Li, Y. Zheng, K. Du and 11 other author(s). IRPS, page 1-5. IEEE, (2024)Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.Z. Zhang, G. Tian, J. Huo, F. Zhang, Q. Zhang, G. Xu, Z. Wu, Y. Cheng, Y. Liu, and H. Yin. Sci. China Inf. Sci., (October 2023)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.L. Zhou, Q. Zhang, H. Yang, Z. Ji, Z. Zhang, R. Xu, H. Yin, and W. Wang. IRPS, page 1-6. IEEE, (2020)Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks.H. Xu, W. Gan, L. Cao, H. Yin, and Z. Wu. ICTA, page 3-4. IEEE, (2022)Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.H. Chang, L. Zhou, H. Yang, Z. Ji, Q. Liu, E. Simoen, H. Yin, and W. Wang. IRPS, page 1-5. IEEE, (2021)

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Disambiguation of "Yin, Huaxiang"

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Qinan Yin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Yin, Huaxiang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Qinan Yin

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.