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NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , и . IRPS, стр. 2. IEEE, (2015)Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate., , , , и . Microelectron. Reliab., 49 (9-11): 998-1002 (2009)Editorial., и . Microelectron. Reliab., 47 (6): 839-840 (2007)A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors., , и . Facing the Multicore-Challenge, том 7174 из Lecture Notes in Computer Science, стр. 147-157. Springer, (2011)Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs., , , , , и . IRPS, стр. 3. IEEE, (2022)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2019)Characterization and modeling of reliability issues in nanoscale devices., , , и . ISCAS, стр. 2445-2448. IEEE, (2015)Neural Network with Optical Frequency-Coded ReLU., , , , , и . OFC, стр. 1-3. IEEE, (2024)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , и . IRPS, стр. 2. IEEE, (2015)Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress, , , , и . IEEE International Reliability Physics Symposium, стр. 1063. (2010)