( en | de | ru )

 

Disambiguation of "Pesic, Milan"

Author of the publication

copydeleteadd this publication to your clipboard
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited).

, , , , , , and . IRPS, page 3. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Alexander Pesic

Marija Pesic

Mihael Pesic

Anita Pesic

Katrin Pesic

 

Other publications of authors with the same name

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , and . IMW, page 1-4. IEEE, (2022)Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2024)Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL., , , , , , , , , and 15 other author(s). IRPS, page 10. IEEE, (2024)Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , and . ESSDERC, page 160-163. IEEE, (2017)Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , and . IRPS, page 4. IEEE, (2022)Gate stack engineering for emerging polarization based non-volatile memories.. Dresden University of Technology, Germany, (2017)Variability sources and reliability of 3D - FeFETs., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2021)Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study., , , , and . IRPS, page 1-5. IEEE, (2024)Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND., , , , , , , , , and 3 other author(s). IRPS, page 1-8. IEEE, (2023)Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors., , , , , , , , , and 3 other author(s). IRPS, page 4. IEEE, (2024)