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Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues

, , , , , and . Electron Devices, IEEE Transactions on, 61 (5): 1292-1298 (May 2014)
DOI: 10.1109/TED.2014.2312820

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The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations., , and . ESSCIRC, page 93-96. IEEE, (2007)Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues, , , , , and . Electron Devices, IEEE Transactions on, 61 (5): 1292-1298 (May 2014)Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants, , , , and . Solid State Electronics, 50 (4): 660-667 (April 2006)Impact Factor =1.210 (2004).Nanoscaled Semiconductor-on-Insulator Structures and Devices, and . volume 2006 of NATO Security through Science Series, chapter Variability in Nanoscale SOI Devices and its Impact on Circuits and Systems, page 259-302. Springer Netherlands, (October 2007)A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory., and . EUROSIM, page 1311-1316. Elsevier, (1995)UTB SOI SRAM Cell Stability under the Influence of Intrinsic Parameter Fluctuation, , , , and . 35th European Solid-State Device Research Conference (ESSDERC), page 553-556. (September 2005)Indexed IEEExplorer.Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs, , , , and . 7th European Conference on Ultimate Integration of Silicon (ULIS), page 93-96. Bologna, Italy, (April 2006)Analysis of FinFET technology on memories., , , , , , , , and . IOLTS, page 169. IEEE Computer Society, (2012)Nanowire transistor solutions for 5nm and beyond., , , , , , and . ISQED, page 269-274. IEEE, (2016)TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies., , , , , , , and . FET, volume 7 of Procedia Computer Science, page 148-149. Elsevier, (2011)