Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A 3.2-12.8Gb/s Duty-Cycle Compensating Quadrature Error Corrector for DRAM Interfaces, With Fast Locking and Low Power Characteristics., , , , , , , , , and 4 other author(s). ESSCIRC, page 463-466. IEEE, (2021)A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application., , , , , , , , , and 13 other author(s). VLSI Technology and Circuits, page 148-149. IEEE, (2022)Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices., , , , , , , , , and 2 other author(s). HPCA, page 61-72. IEEE Computer Society, (2017)A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power., , , , , , , , , and 20 other author(s). ISSCC, page 378-380. IEEE, (2019)A 60-Gb/s/pin single-ended PAM-4 transmitter with timing skew training and low power data encoding in mimicked 10nm class DRAM process., , , , , , , , , and 18 other author(s). CICC, page 1-2. IEEE, (2022)A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme., , , , , , , , , and 9 other author(s). ISSCC, page 44-46. IEEE, (2012)A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking., , , , , , , , , and 13 other author(s). ISSCC, page 496-498. IEEE, (2011)Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM., , , , , , , , , and 25 other author(s). A-SSCC, page 153-156. IEEE, (2017)22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process., , , , , , , , , and 29 other author(s). ISSCC, page 382-384. IEEE, (2020)A 24Gb/s/pin PAM-4 Built Out Tester chip enabling PAM-4 chips test with NRZ interface ATE., , , , , , , , , and . A-SSCC, page 1-3. IEEE, (2021)