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A 529 GHz dynamic frequency divider in 130 nm InP HBT process.

, , , , and . IEICE Electron. Express, 12 (3): 20141118 (2015)

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InP HBT Technologies for sub-THz Communications., , , , , , and . VLSI Technology and Circuits, page 122-123. IEEE, (2022)50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT., , , , and . BCICTS, page 1-6. IEEE, (2019)8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology., , , and . BCICTS, page 164-167. IEEE, (2018)InP HBT Technologies for THz Integrated Circuits., , , , and . Proc. IEEE, 105 (6): 1051-1067 (2017)A 529 GHz dynamic frequency divider in 130 nm InP HBT process., , , , and . IEICE Electron. Express, 12 (3): 20141118 (2015)A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers., , , , , and . RWS, page 1-4. IEEE, (2019)First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors., , , , , , and . DRC, page 105-106. IEEE, (2019)Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers., , , , , and . DRC, page 1-2. IEEE, (2018)High-Gain 500-GHz InP HBT Power Amplifiers., , , , , , , , , and 2 other author(s). BCICTS, page 1-4. IEEE, (2021)Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact., , , , and . DRC, page 45-46. IEEE, (2019)