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Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS., , , и . ESSDERC, стр. 246-249. IEEE, (2014)Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories.. NVMTS, стр. 1-5. IEEE, (2017)Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide., , и . ESSDERC, стр. 368-371. IEEE, (2022)Random Telegraph Signal noise properties of HfOx RRAM in high resistive state., , , , и . ESSDERC, стр. 274-277. IEEE, (2012)Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model., , и . ESSDERC, стр. 316-319. IEEE, (2022)Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective., , , и . PATMOS, стр. 1-5. IEEE, (2017)A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules., , , , , и . IEEE Trans. Neural Networks Learn. Syst., 35 (4): 5117-5129 (апреля 2024)Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS., , , и . ESSDERC, стр. 166-169. IEEE, (2013)A microscopic physical description of RTN current fluctuations in HfOx RRAM., , , , , и . IRPS, стр. 5. IEEE, (2015)Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions., , и . IRPS, стр. 6-1. IEEE, (2022)