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Hot-Carrier Degradation modeling of DCR drift in SPADs., , и . ESSDERC, стр. 61-64. IEEE, (2023)Insight Into HCI Reliability on I/O Nitrided Devices., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)Simulation Study of the Origin of Ge High Speed Photodetector Degradation., , , , и . IRPS, стр. 1-4. IEEE, (2021)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , и . IRPS, стр. 5. IEEE, (2015)Characterization and Modelling of High Speed Ge Photodetectors Reliability., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2019)Process Optimization for HCI Improvement in I/O Analog Devices., , , , , , , и . IRPS, стр. 1-6. IEEE, (2019)Body effect induced wear-out acceleration in ultra-thin oxides., , , , и . Microelectron. Reliab., 41 (7): 1031-1034 (2001)Non-conducting Hot carrier temperature activation and temperature sense effect., , , , и . IRPS, стр. 1-6. IEEE, (2024)Twitter-based Polarised Embeddings for Abusive Language Detection., , и . ACII Workshops, стр. 1-7. IEEE, (2019)Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)., , , , , , , , , и . IRPS, стр. 6. IEEE, (2018)