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Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs., , , , , , , , , and 2 other author(s). ESSDERC, page 299-302. IEEE, (2021)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications., and . Microelectron. Reliab., 41 (9-10): 1307-1312 (2001)Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration., , , , , , , , , and 2 other author(s). IRPS, page 1-5. IEEE, (2021)Frequency dependant gate oxide TDDB model., , , , , , and . IRPS, page 25-1. IEEE, (2022)CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes., , , , , and . ESSDERC, page 405-408. IEEE, (2014)Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications., , , , , , , and . IRPS, page 4. IEEE, (2022)BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations., , , , , , , and . IRPS, page 1-5. IEEE, (2021)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles., , , , , , , , , and 6 other author(s). IRPS, page 4. IEEE, (2024)