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A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS., , , , и . ISSCC, стр. 536-537. IEEE, (2008)Modeling FinFET metal gate stack resistance for 14nm node and beyond., , , , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Ultra-wideband channel model for communication around the human body., , , , , и . IEEE J. Sel. Areas Commun., 24 (4): 927-933 (2006)A 4.1-mW 3.5-GS/s 6-Bit Time-Interleaved ADC in 40-nm CMOS., , , и . IEEE Trans. Circuits Syst. II Express Briefs, 61-II (7): 466-470 (2014)Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification., , , , , , , и . Sensors, 18 (11): 3683 (2018)A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication., , , , , , , , , и 2 other автор(ы). IEEE J. Solid State Circuits, 42 (11): 2515-2527 (2007)An 80 GHz Low-Noise Amplifier Resilient to the TX Spillover in Phase-Modulated Continuous-Wave Radars., , , , , , , и . IEEE J. Solid State Circuits, 51 (5): 1141-1153 (2016)Low-Area Active-Feedback Low-Noise Amplifier Design in Scaled Digital CMOS., , , , и . IEEE J. Solid State Circuits, 43 (11): 2422-2433 (2008)Digital ground bounce reduction by supply current shaping and clock frequency Modulation., , , , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 24 (1): 65-76 (2005)Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS., , , , и . IEEE J. Solid State Circuits, 57 (5): 1300-1313 (2022)