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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.

Z. Zheng, J. Xie, Y. Sun, Y. Xu, X. Wang, L. Jiao, Z. Zhou, Q. Kong, Y. Chen, and X. Gong. ICICDT, page 29-33. IEEE, (2023)

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Zheng-Zheng Kuang

Jiarong Zheng

Xing Zheng

Xiangtao Zheng

Jiguang Zheng

Other publications of authors with the same name

Distributed Multi-Cloud Multi-Access Edge Computing by Multi-Agent Reinforcement Learning.Y. Zhang, B. Di, Z. Zheng, J. Lin, and L. Song. IEEE Trans. Wirel. Commun., 20 (4): 2565-2578 (2021)Multi-Layer Radio Network Slicing for Heterogeneous Communication Systems.J. Hu, Z. Zheng, B. Di, and L. Song. IEEE Trans. Netw. Sci. Eng., 7 (4): 2378-2391 (2020)Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing.W. Tang, J. Liu, C. Sun, Z. Zheng, Y. Liu, H. Yang, C. Jiang, K. Ni, X. Gong, and X. Li. IEEE Trans. Circuits Syst. I Regul. Pap., 70 (12): 5166-5179 (December 2023)Hybrid cooperation for machine-to-machine data collection in hierarchical smart building networks.X. Luan, Z. Zheng, T. Wang, J. Wu, and H. Xiang. IET Commun., 9 (3): 421-428 (2015)Human Behavior Based Learning Framework for Spectrum Allocation in Downlink CoMP for 5G Networks.Z. Zheng, Q. Chi, C. Wu, W. Zhou, and L. Song. APCC, page 173-178. IEEE, (2018)Spectrum Trading Contract Design for UAV Assisted Offloading in Cellular Networks.Z. Hu, Z. Zheng, T. Wang, and L. Song. ICC, page 1-6. IEEE, (2018)EdgeFlow: Open-Source Multi-layer Data Flow Processing in Edge Computing for 5G and Beyond.C. Yao, X. Wang, Z. Zheng, G. Sun, and L. Song. CoRR, (2018)BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.L. Jiao, Z. Zhou, Z. Zheng, Y. Kang, C. Sun, Q. Kong, X. Wang, D. Zhang, G. Liu, L. Liu and 1 other author(s). ICICDT, page 5-7. IEEE, (2022)First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.Y. Chen, G. Zhang, J. Zhou, Z. Zheng, L. Jiao, H. Wang, Z. Zhou, A. Kumar, J. Zhang, Y. Wang and 3 other author(s). VLSI Technology and Circuits, page 405-406. IEEE, (2022)Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).C. Wang, A. Kumar, K. Han, C. Sun, H. Xu, J. Zhang, Y. Kang, Q. Kong, Z. Zheng, Y. Wang and 1 other author(s). VLSI Technology and Circuits, page 294-295. IEEE, (2022)

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Disambiguation of "Zheng, Zijie"

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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.

Please choose a person to relate this publication to

Zheng-Zheng Kuang

Jiarong Zheng

Xing Zheng

Xiangtao Zheng

Jiguang Zheng

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zheng, Zijie"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.

Please choose a person to relate this publication to

Zheng-Zheng Kuang

Jiarong Zheng

Xing Zheng

Xiangtao Zheng

Jiguang Zheng

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.