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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.

Z. Zheng, J. Xie, Y. Sun, Y. Xu, X. Wang, L. Jiao, Z. Zhou, Q. Kong, Y. Chen, и X. Gong. ICICDT, стр. 29-33. IEEE, (2023)

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Xu Qiwen

Thay Kong

Xiangqing Kong

Seunghyun Kong

Deming Kong

Другие публикации лиц с тем же именем

First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.Z. Zheng, J. Xie, Y. Sun, Y. Xu, X. Wang, L. Jiao, Z. Zhou, Q. Kong, Y. Chen, и X. Gong. ICICDT, стр. 29-33. IEEE, (2023)First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection.J. Zhang, H. Xu, G. Zhang, Y. Chen, H. Wang, K. Tan, S. Wicaksono, C. Wang, C. Sun, Q. Kong и 3 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2021)Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.D. Zhang, J. Wu, Q. Kong, Z. Zhou, L. Liu, K. Han, C. Sun, X. Wang, G. Liu, L. Jiao и 4 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving.X. Wang, Z. Zheng, Q. Kong, L. Jiao, K. Han, C. Sun, Z. Zhou, L. Liu, Y. Kang, G. Liu и 2 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration.Z. Zhou, L. Jiao, Q. Kong, Z. Zheng, K. Han, Y. Chen, C. Sun, B. Nguyen, и X. Gong. VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.Z. Zheng, C. Sun, L. Jiao, D. Zhang, Z. Zhou, X. Wang, G. Liu, Q. Kong, Y. Chen, K. Ni и 1 other автор(ы). VLSI Technology and Circuits, стр. 389-390. IEEE, (2022)First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.Y. Chen, G. Zhang, J. Zhou, Z. Zheng, L. Jiao, H. Wang, Z. Zhou, A. Kumar, J. Zhang, Y. Wang и 3 other автор(ы). VLSI Technology and Circuits, стр. 405-406. IEEE, (2022)Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).C. Wang, A. Kumar, K. Han, C. Sun, H. Xu, J. Zhang, Y. Kang, Q. Kong, Z. Zheng, Y. Wang и 1 other автор(ы). VLSI Technology and Circuits, стр. 294-295. IEEE, (2022)First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.J. Zhang, H. Xu, K. Tan, S. Wicaksono, Q. Kong, G. Zhang, Y. Chen, C. Sun, H. Wang, C. Wang и 6 other автор(ы). VLSI Technology and Circuits, стр. 409-410. IEEE, (2022)BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.L. Jiao, Z. Zhou, Z. Zheng, Y. Kang, C. Sun, Q. Kong, X. Wang, D. Zhang, G. Liu, L. Liu и 1 other автор(ы). ICICDT, стр. 5-7. IEEE, (2022)

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