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First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.

Y. Chen, G. Zhang, J. Zhou, Z. Zheng, L. Jiao, H. Wang, Z. Zhou, A. Kumar, J. Zhang, Y. Wang, Q. Kong, C. Sun, and X. Gong. VLSI Technology and Circuits, page 405-406. IEEE, (2022)

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Zhou Zhou

Yayun Zhou

Yaming Zhou

Xianzhong Zhou

Other publications of authors with the same name

First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.L. Jiao, K. Han, Z. Zhou, Z. Zheng, X. Wang, Q. Kong, Y. Kang, J. Zhang, L. Liu, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.Z. Zheng, J. Xie, Y. Sun, Y. Xu, X. Wang, L. Jiao, Z. Zhou, Q. Kong, Y. Chen, and X. Gong. ICICDT, page 29-33. IEEE, (2023)First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.Z. Zheng, L. Jiao, Z. Zhou, Y. Wang, L. Liu, K. Han, C. Sun, Q. Kong, D. Zhang, X. Wang and 2 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.Z. Zhou, L. Jiao, J. Zhou, Z. Zheng, Y. Chen, K. Han, Y. Kang, and X. Gong. VLSI Technology and Circuits, page 357-358. IEEE, (2022)Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.D. Zhang, J. Wu, Q. Kong, Z. Zhou, L. Liu, K. Han, C. Sun, X. Wang, G. Liu, L. Jiao and 4 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving.X. Wang, Z. Zheng, Q. Kong, L. Jiao, K. Han, C. Sun, Z. Zhou, L. Liu, Y. Kang, G. Liu and 2 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration.Z. Zhou, L. Jiao, Q. Kong, Z. Zheng, K. Han, Y. Chen, C. Sun, B. Nguyen, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Fault Diagnosis of Steel Wire Ropes Based on Magnetic Flux Leakage Imaging Under Strong Shaking and Strand Noises.Z. Zhou, and Z. Liu. IEEE Trans. Ind. Electron., 68 (3): 2543-2553 (2021)First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack.Z. Zhou, L. Jiao, Z. Zheng, X. Wang, D. Zhang, K. Ni, and X. Gong. VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.J. Zhang, H. Xu, K. Tan, S. Wicaksono, Q. Kong, G. Zhang, Y. Chen, C. Sun, H. Wang, C. Wang and 6 other author(s). VLSI Technology and Circuits, page 409-410. IEEE, (2022)

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Disambiguation of "Zhou, Zuopu"

Please choose a person to relate this publication to

Zhou Zhou

Zhou Zhou

Yayun Zhou

Yaming Zhou

Xianzhong Zhou

Other publications of authors with the same name

Disambiguation