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A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology., , , and . IEICE Trans. Electron., 88-C (6): 1267-1270 (2005)Noise Parameters Computation of Microwave Devices Using Genetic Algorithms., , , and . IEICE Trans. Electron., 88-C (7): 1382-1384 (2005)A Ka - to G-Band Detector With 5.5-GHz Video Bandwidth Using a Modified Traveling-Wave Structure in 65-nm CMOS Technology., , , , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 70 (4): 1371-1375 (April 2023)Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors., , , , , and . Microelectron. Reliab., 48 (2): 193-199 (2008)A Deep Learning based Sustainable Energy Scheduling System., , , , and . APSIPA ASC, page 401-407. IEEE, (2023)pHEMT Single-Voltage-Supply Direct-Conversion Receiver With a 3-10 GHz LC Ladder LNA., , , and . RWS, page 1-3. IEEE, (2019)A Generic Embedded Device for Retrieving and Transmitting Information of Various Customized Applications., , , and . ICRA, page 978-983. IEEE, (2004)Design, simulation, and verification of fluidic light-guide chips with various geometries of micro polymer channels., , and . NEMS, page 179-182. IEEE, (2012)2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier., , , and . RWS, page 84-87. IEEE, (2018)A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement., , , , , and . IEICE Trans. Electron., 88-C (5): 845-850 (2005)