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Disambiguation of "Lau, W. S."

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Shape recovery from turntable sequence using rim reconstruction.

, , , and . Pattern Recognit., 41 (11): 3295-3301 (2008)

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S. W. Armfield The University of Sydney

Peter H W Lau

Andreas W S Jarosch

Patrick W S Okanya

Albrecht Lau

 

Other publications of authors with the same name

Sun Tzu's as business and management strategies for world class business excellence evaluation under QFD methodology., , , and . Business Proc. Manag. Journal, 4 (2): 96-113 (1998)Shape recovery from turntable sequence using rim reconstruction., , , and . Pattern Recognit., 41 (11): 3295-3301 (2008)Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors., , , , , , and . Microelectron. Reliab., 49 (1): 1-7 (2009)Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 48 (6): 919-922 (2008)The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode., , , , , and . Microelectron. Reliab., (2016)Shape Recovery from Turntable Image Sequence., , , and . ACCV (2), volume 4844 of Lecture Notes in Computer Science, page 186-195. Springer, (2007)A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering., , , , , , , and . Microelectron. Reliab., 48 (4): 497-503 (2008)Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si., , , , , , , and . Microelectron. Reliab., 47 (2-3): 429-433 (2007)Solid reconstruction from orthographic views using 2-stage extrusion., , , and . Comput. Aided Des., 33 (1): 91-102 (2001)An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits., , , , and . Microelectron. Reliab., 54 (6-7): 1169-1172 (2014)