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Disambiguation of "Kim, Ki-Ryong"

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A 0.166 pJ/b/pF, 3.5-5 Gb/s TSV I/O Interface With VOH Drift Control.

, , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 68 (6): 1822-1826 (2021)

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Ryong Kim

Sung-Ryong Kim

Young-Ryong Kim

Song-Ki Kim

Paig-Ki Kim

 

Other publications of authors with the same name

Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation., , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 24 (4): 1342-1350 (2016)Triplet-based Spike Timing Dependent Plasticity Circuit Design for three-terminal Spintronic Synapse., , and . ICECS, page 689-692. IEEE, (2018)0.293-mm2 Fast Transient Response Hysteretic Quasi-V2 DC-DC Converter With Area-Efficient Time-Domain-Based Controller in 0.35-µm CMOS., , , and . IEEE J. Solid State Circuits, 53 (6): 1844-1855 (2018)A 6.9-μm2 3.26-ns 31.25-fj Robust Level Shifter With Wide Voltage and Frequency Ranges., , , and . IEEE Trans. Circuits Syst. II Express Briefs, 68 (4): 1433-1437 (2021)Area- and Energy-Efficient STDP Learning Algorithm for Spiking Neural Network SoC., , , , and . IEEE Access, (2020)A 5 Gb/s Time-Interleaved Voltage-Mode Duobinary Encoding Scheme for 3-D-Stacked IC., , , , , , and . IEEE J. Solid State Circuits, 57 (6): 1913-1923 (2022)SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased with Technology Scaling., , , , , , , , , and 1 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM., , , , , , and . VLSI Technology and Circuits, page 152-153. IEEE, (2022)An Energy-Efficient Design of TSV I/O for HBM With a Data Rate up to 10 Gb/s., , , , , , and . IEEE J. Solid State Circuits, 58 (11): 3242-3252 (November 2023)Transient Cell Supply Voltage Collapse Write Assist Using Charge Redistribution., , , and . IEEE Trans. Circuits Syst. II Express Briefs, 63-II (10): 964-968 (2016)