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An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface., , , , , , , и . ISSCC, стр. 136-138. IEEE, (2012)A CMOS transceiver for DRAM bus system with a demultiplexed equalization scheme., , , , , и . IEEE J. Solid State Circuits, 37 (2): 245-250 (2002)Aquabolt-XL: Samsung HBM2-PIM with in-memory processing for ML accelerators and beyond., , , , , , , , , и 10 other автор(ы). HCS, стр. 1-26. IEEE, (2021)18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 314-315. IEEE, (2016)A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process., , , , , , , , , и 16 other автор(ы). VLSI Circuits, стр. 147-148. IEEE, (2018)An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM., , , , , , , , , и 7 other автор(ы). A-SSCC, стр. 139-142. IEEE, (2018)A crosstalk-and-ISI equalizing receiver in 2-drop single-ended SSTL memory channel., , , , , , , и . CICC, стр. 1-4. IEEE, (2010)Design and fabrication of a vibration sensor using a conductive ball., , , и . Microelectron. J., 38 (3): 416-421 (2007)A 2-Gb/s CMOS Integrating Two-Tap DFE Receiver for Four-Drop Single-Ended Signaling., , , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 56-I (8): 1645-1656 (2009)A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 55 (1): 157-166 (2020)