( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles

, , , , , , , , и . Adv. Electron. Mater., 6 (3): 1901015 (29.01.2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Wenke Weinreich

Eckart Weinreich

Max Weinreich

Robert Weinreich

Ingo Weinreich

 

Другие публикации лиц с тем же именем

Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2., , и . ICICDT, стр. 84-87. IEEE, (2022)IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 74-77. IEEE, (2019)La-doped ZrO2 based BEoL decoupling capacitors., , , , , , , и . ICICDT, стр. 1-4. IEEE, (2016)ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM., , , , , , , , , и 1 other автор(ы). ICICDT, стр. 1-4. IEEE, (2014)Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles, , , , , , , , и . Adv. Electron. Mater., 6 (3): 1901015 (29.01.2020)CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures., , , , , и . ESSDERC, стр. 130-133. IEEE, (2018)ALD ZrO2 processes for BEoL device applications., , , , , , и . ICICDT, стр. 1-4. IEEE, (2014)