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Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles

, , , , , , , , and . Adv. Electron. Mater., 6 (3): 1901015 (Jan 29, 2020)

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Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application, , , , , , , , , and 2 other author(s). IEEE Electron Device Letters, 41 (12): 1762-1765 (Oct 15, 2020)Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , and 9 other author(s). IRPS, page 1-9. IEEE, (2020)Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles, , , , , , , , and . Adv. Electron. Mater., 6 (3): 1901015 (Jan 29, 2020)High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application., , , , , , , , , and 5 other author(s). IMW, page 1-3. IEEE, (2021)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , and 5 other author(s). IRPS, page 11-1. IEEE, (2022)Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications., , , , , , , , , and 1 other author(s). NVMTS, page 1-4. IEEE, (2019)Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies., , , , , , , and . IRPS, page 47-1. IEEE, (2022)