( en | de | ru )

 

Disambiguation of "Hoffmann, Raik"

Author of the publication

copydeleteadd this publication to your clipboard
Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles

, , , , , , , , and . Adv. Electron. Mater., 6 (3): 1901015 (Jan 29, 2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Nikola Raikoff

Zoni Tr Raikoff

Kauko K Raikas

Raitscho Raikoff

Katri Raik

 

Other publications of authors with the same name

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , and 9 other author(s). IRPS, page 1-9. IEEE, (2020)Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2023)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , and 5 other author(s). IRPS, page 11-1. IEEE, (2022)Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications., , , , , , , , , and 1 other author(s). NVMTS, page 1-4. IEEE, (2019)BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications., , , , , , , , , and 3 other author(s). ICICDT, page 8-11. IEEE, (2022)Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles, , , , , , , , and . Adv. Electron. Mater., 6 (3): 1901015 (Jan 29, 2020)Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer., , , , , , , , , and 6 other author(s). VLSI Technology and Circuits, page 355-356. IEEE, (2022)Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?, , , , , , , , , and . IMW, page 1-4. IEEE, (2023)Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2022)