Inproceedings,
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.
D. Lee, H. Cho, J. Kim, Y. Ku, S. Oh, C. Kim, H. Kim, W. Lee, T. Kim, T. Yun, M. Kim, S. Lim, S. Lee, B. Yun, J. Moon, J. Park, S. Choi, Y. Park, C. Lee, C. Jeong, J. Lee, S. Lee, W. We, J. Yun, D. Lee, J. Shin, S. Kim, J. Lee, J. Choi, Y. Ju, M. Park, K. Lee, Y. Hur, D. Shim, S. Lee, J. Chun, and K. Jin.ISSCC, page 334-336. IEEE, (2020)
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- conf/isscc/LeeCKKOKKLKYKLL20
- entry type
- inproceedings
- booktitle
- ISSCC
- year
- 2020
- pages
- 334-336
- publisher
- IEEE
- crossref
- conf/isscc/2020
- ee
- https://doi.org/10.1109/ISSCC19947.2020.9062977
- isbn
- 978-1-7281-3205-1
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#LeeCKKOKKLKYKLL20
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%1 conf/isscc/LeeCKKOKKLKYKLL20
%A Lee, Dong-Uk
%A Cho, Ho Sung
%A Kim, Jihwan
%A Ku, Young Jun
%A Oh, Sangmuk
%A Kim, Chul Dae
%A Kim, Hyun Woo
%A Lee, Wooyoung
%A Kim, Tae-Kyun
%A Yun, Tae Sik
%A Kim, Min Jeong
%A Lim, SeungGyeon
%A Lee, Seong Hee
%A Yun, Byung Kuk
%A Moon, Jun Il
%A Park, Ji Hwan
%A Choi, Seokwoo
%A Park, Young Jun
%A Lee, Chang Kwon
%A Jeong, Chunseok
%A Lee, Jae-Seung
%A Lee, Sang Hun
%A We, Woo Sung
%A Yun, Jong Chan
%A Lee, Doobock
%A Shin, Junghyun
%A Kim, Seungchan
%A Lee, Junghwan
%A Choi, Jiho
%A Ju, Yucheon
%A Park, Myeong-Jae
%A Lee, Kang Seol
%A Hur, Youngdo
%A Shim, Daeyong
%A Lee, Sangkwon
%A Chun, Junhyun
%A Jin, Kyowon
%B ISSCC
%D 2020
%I IEEE
%K dblp
%P 334-336
%T 22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#LeeCKKOKKLKYKLL20
%@ 978-1-7281-3205-1
@inproceedings{conf/isscc/LeeCKKOKKLKYKLL20,
added-at = {2023-08-24T00:00:00.000+0200},
author = {Lee, Dong-Uk and Cho, Ho Sung and Kim, Jihwan and Ku, Young Jun and Oh, Sangmuk and Kim, Chul Dae and Kim, Hyun Woo and Lee, Wooyoung and Kim, Tae-Kyun and Yun, Tae Sik and Kim, Min Jeong and Lim, SeungGyeon and Lee, Seong Hee and Yun, Byung Kuk and Moon, Jun Il and Park, Ji Hwan and Choi, Seokwoo and Park, Young Jun and Lee, Chang Kwon and Jeong, Chunseok and Lee, Jae-Seung and Lee, Sang Hun and We, Woo Sung and Yun, Jong Chan and Lee, Doobock and Shin, Junghyun and Kim, Seungchan and Lee, Junghwan and Choi, Jiho and Ju, Yucheon and Park, Myeong-Jae and Lee, Kang Seol and Hur, Youngdo and Shim, Daeyong and Lee, Sangkwon and Chun, Junhyun and Jin, Kyowon},
biburl = {https://www.bibsonomy.org/bibtex/23f2ec2e42a3748b96be7ea806e218d30/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2020},
ee = {https://doi.org/10.1109/ISSCC19947.2020.9062977},
interhash = {039bad6adcfca4301850c934eeac8d89},
intrahash = {3f2ec2e42a3748b96be7ea806e218d30},
isbn = {978-1-7281-3205-1},
keywords = {dblp},
pages = {334-336},
publisher = {IEEE},
timestamp = {2024-04-10T11:04:13.000+0200},
title = {22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#LeeCKKOKKLKYKLL20},
year = 2020
}