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22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.

, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , and . ISSCC, page 334-336. IEEE, (2020)

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