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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

D. Das, L. Fernandes, P. Ravindran, T. Song, C. Park, N. Afroze, M. Tian, H. Chen, W. Chem, K. Kim, J. Woo, S. Lim, K. Kim, W. Kim, D. Ha, S. Yu, S. Datta, and A. Khan. IMW, page 1-4. IEEE, (2024)

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Hans Lim

Frans Lim

Soyoung Lim

Minha Lim

Rastoni Lim

Other publications of authors with the same name

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.C. Lee, M. Yu, S. Park, H. Lee, B. Kim, S. Lim, J. Lee, S. Lee, M. Park, S. Ahn and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.D. Das, L. Fernandes, P. Ravindran, T. Song, C. Park, N. Afroze, M. Tian, H. Chen, W. Chem, K. Kim and 8 other author(s). IMW, page 1-4. IEEE, (2024)Investigation of Neural Networks Using Synapse Arrays Based on Gated Schottky Diodes.S. Lim, D. Kwon, S. Lee, H. Kim, J. Bae, and J. Lee. IJCNN, page 1-8. IEEE, (2019)A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND.I. Myeong, S. Lim, T. Kim, S. Park, S. Noh, S. Lee, J. Woo, H. Ko, Y. Noh, M. Choi and 23 other author(s). IRPS, page 9. IEEE, (2024)Coexistence study on 5G V2X in mmWave.J. Park, J. Hwang, S. Lim, Y. Yang, and S. Lee. ICTC, page 716-718. IEEE, (2021)Review of candidate devices for neuromorphic applications.J. Lee, Y. Noh, H. Kim, J. Kim, J. Bae, S. Woo, S. Lee, S. Lim, W. Kang, Y. Seo and 3 other author(s). ESSDERC, page 22-27. IEEE, (2019)Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices.S. Lim, J. Bae, J. Eum, S. Lee, C. Kim, D. Kwon, B. Park, and J. Lee. Neural Comput. Appl., 31 (11): 8101-8116 (2019)Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET.T. Kim, S. Lim, I. Myeong, S. Park, S. Noh, S. Lee, J. Woo, H. Ko, Y. Noh, M. Choi and 22 other author(s). IRPS, page 6. IEEE, (2024)Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.Z. Zhao, S. Woo, K. Aabrar, S. Kirtania, Z. Jiang, S. Deng, Y. Xiao, H. Mulaosmanovic, S. Dünkel, D. Kleimaier and 15 other author(s). CoRR, (2024)Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.S. Lim, S. Kim, C. Lee, H. Choi, N. Kim, J. Jung, H. Yang, T. Kim, J. Lim, D. Ha and 4 other author(s). IMW, page 1-4. IEEE, (2023)

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Disambiguation of "Lim, Suhwan"

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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Please choose a person to relate this publication to

Hans Lim

Frans Lim

Soyoung Lim

Minha Lim

Rastoni Lim

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Lim, Suhwan"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Please choose a person to relate this publication to

Hans Lim

Frans Lim

Soyoung Lim

Minha Lim

Rastoni Lim

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.