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Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy.

, , , , , , и . MIPRO, стр. 1-6. IEEE, (2019)

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Michael Weißhaupt

Petra Weißhaupt

Petra Weißhaupt

Frank Weißhaupt

Karen Roselind Weißhaupt

 

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Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , и . MIPRO, стр. 55-59. IEEE, (2021)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy., , , , , , и . MIPRO, стр. 1-6. IEEE, (2019)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics., , , , , , , , и . MIPRO, стр. 45-49. IEEE, (2021)Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy., , , , , и . MIPRO, стр. 31-35. IEEE, (2021)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates., , , , , , , , и . MIPRO, стр. 32-35. IEEE, (2018)MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate., , , , , , , , , и . MIPRO, стр. 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy., , , , , , и . MIPRO, стр. 40-44. IEEE, (2021)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers., , , , , , , , , и . MIPRO, стр. 17-21. IEEE, (2020)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well., , , , , , , и . MIPRO, стр. 7-12. IEEE, (2019)Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD., , , , , и . MIPRO, стр. 43-47. IEEE, (2017)