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80 GHz low noise amplifiers in 65nm CMOS SOI., , , , , , , and . ESSCIRC, page 348-351. IEEE, (2007)A comparison between grounded and floating shield inductors for mmW VCOs., , , , and . ESSCIRC, page 250-253. IEEE, (2010)Benefits of Joint Optimization of Tunable Wake-up Radio Architecture and Protocols., , , , , , , and . ICECS, page 789-792. IEEE, (2018)A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI., , , , , , , , and . IEEE J. Solid State Circuits, 45 (7): 1286-1294 (2010)SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 58 (6): 1782-1797 (2023)Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies., , , , , and . ESSDERC, page 332-335. IEEE, (2022)A compact bidirectional reconfigurable 2nd-order low-pass filter for 5G FR2 applications., , , and . PRIME, page 77-80. IEEE, (2023)Design for millimeter-wave applications in silicon technologies., , , , , , , , , and 3 other author(s). ESSCIRC, page 464-471. IEEE, (2007)A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI., , , , , , , , and . ESSCIRC, page 168-171. IEEE, (2009)A 60GHz class F-E power VCO with vector-modulator feedback in 65nm CMOS technology., , , , , and . ICECS, page 173-176. IEEE, (2012)