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Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz., , , , , и . ESSDERC, стр. 189-192. IEEE, (2012)Measurement based accurate definition of the SOA edges for SiGe HBTs., , , и . BCICTS, стр. 1-4. IEEE, (2019)Physics-based electrical compact model for monolayer Graphene FETs., , , , , , и . ESSDERC, стр. 240-243. IEEE, (2016)Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation., , , , , и . ESSDERC, стр. 305-308. IEEE, (2014)Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design., , , , , , , , , и . ESSDERC, стр. 57-60. IEEE, (2023)Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance., , , , , , , , , и 1 other автор(ы). BCICTS, стр. 1-7. IEEE, (2021)InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design., , , , , , , , и . BCICTS, стр. 1-4. IEEE, (2021)Substrate-coupling effect in BiCMOS technology for millimeter wave applications., , , , , и . NEWCAS, стр. 1-4. IEEE, (2015)Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current., , , , , и . ESSDERC, стр. 154-157. IEEE, (2019)Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , и . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)