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Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants, , , , и . Solid State Electronics, 50 (4): 660-667 (апреля 2006)Impact Factor =1.210 (2004).Nanoscaled Semiconductor-on-Insulator Structures and Devices, и . том 2006 из NATO Security through Science Series, глава Variability in Nanoscale SOI Devices and its Impact on Circuits and Systems, стр. 259-302. Springer Netherlands, (октября 2007)The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations., , и . ESSCIRC, стр. 93-96. IEEE, (2007)Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues, , , , , и . Electron Devices, IEEE Transactions on, 61 (5): 1292-1298 (мая 2014)TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies., , , , , , , и . FET, том 7 из Procedia Computer Science, стр. 148-149. Elsevier, (2011)UTB SOI SRAM Cell Stability under the Influence of Intrinsic Parameter Fluctuation, , , , и . 35th European Solid-State Device Research Conference (ESSDERC), стр. 553-556. (сентября 2005)Indexed IEEExplorer.Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs, , , , и . 7th European Conference on Ultimate Integration of Silicon (ULIS), стр. 93-96. Bologna, Italy, (апреля 2006)Analysis of FinFET technology on memories., , , , , , , , и . IOLTS, стр. 169. IEEE Computer Society, (2012)Nanowire transistor solutions for 5nm and beyond., , , , , , и . ISQED, стр. 269-274. IEEE, (2016)A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory., и . EUROSIM, стр. 1311-1316. Elsevier, (1995)