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8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.

U. Kang, H. Chung, S. Heo, D. Park, H. Lee, J. Kim, S. Ahn, S. Cha, J. Ahn, D. Kwon, J. Lee, H. Joo, W. Kim, D. Jang, N. Kim, J. Choi, T. Chung, J. Yoo, J. Choi, C. Kim, and Y. Jun. IEEE J. Solid State Circuits, 45 (1): 111-119 (2010)

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Young-Hyun Lee

Young-Hyun Sung

Young-Hyun Lee

Young Jun Kim

Other publications of authors with the same name

CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control.C. Kim, B. Kong, C. Lee, and Y. Jun. ISCAS, page 3094-3097. IEEE, (2008)10.4 A 5.8Gb/s adaptive integrating duobinary-based DFE receiver for multi-drop memory interface.H. Lim, S. Choi, S. Lee, C. Baek, J. Lee, G. Hwang, B. Kong, and Y. Jun. ISSCC, page 1-3. IEEE, (2015)A DLL with Jitter-Reduction Techniques for DRAM Interfaces.B. Kim, L. Kim, K. Park, Y. Jun, and S. Cho. ISSCC, page 496-497. IEEE, (2007)A low-power two-line inversion method for driving LCD panels.S. Choi, G. Hwang, Y. Jun, K. Kwon, and J. Chun. ISCAS, page 1995-1998. IEEE, (2012)Adaptive multi-pulse program scheme based on tunneling speed classification for next generation multi-bit/cell NAND FLASH.Y. Cho, I. Park, S. Yoon, N. Lee, S. Joo, K. Song, K. Choi, J. Han, K. Kyung, and Y. Jun. VLSIC, page 136-137. IEEE, (2012)Adaptive frequency-controlled ultra-fast hysteretic buck converter for portable devices.K. Kim, B. Kong, and Y. Jun. ISOCC, page 5-8. IEEE, (2012)Novel Low-Voltage Small-Area I/O Buffer for Mixed-Voltage Application.Y. Kim, J. Kim, Y. Jun, and B. Kong. FGIT-CA/CES3, volume 256 of Communications in Computer and Information Science, page 364-370. Springer, (2011)High speed VLSI logic simulation using bitwise operations and parallel processing.Y. Jun, I. Hajj, S. Lee, and S. Park. ICCD, page 171-174. IEEE Computer Society, (1990)CMOS cross-coupled charge pump with improved latch-up immunity.S. Park, Y. Kang, J. Kim, T. Han, Y. Jun, C. Lee, and B. Kong. IEICE Electron. Express, 6 (11): 736-742 (2009)A pre-emphasis output buffer control scheme for a GDDR3 SDRAM interface.S. Hwang, Y. Jun, and M. Sung. IEICE Electron. Express, 5 (12): 446-450 (2008)

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Disambiguation of "Jun, Young-Hyun"

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8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.

Please choose a person to relate this publication to

Young-Hyun Lee

Young-Hyun Lee

Young-Hyun Sung

Young-Hyun Lee

Young Jun Kim

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Jun, Young-Hyun"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.

Please choose a person to relate this publication to

Young-Hyun Lee

Young-Hyun Lee

Young-Hyun Sung

Young-Hyun Lee

Young Jun Kim

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.