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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

G. Yan, J. Bi, G. Xu, K. Xi, B. Li, L. Fan, and H. Yin. IEEE Access, (2020)

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Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Sheng Yin

Other publications of authors with the same name

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.G. Tian, J. Bi, G. Xu, K. Xi, X. Yang, S. Majumdar, H. Yin, Q. Xu, and W. Wang. Sci. China Inf. Sci., (2020)Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.G. Yan, J. Bi, G. Xu, K. Xi, B. Li, L. Fan, and H. Yin. IEEE Access, (2020)A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.L. Zhou, Z. Zhang, H. Yang, Z. Ji, Q. Liu, Q. Zhang, E. Simoen, H. Yin, J. Luo, A. Du and 2 other author(s). IRPS, page 1-7. IEEE, (2021)Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.H. Yang, L. Qi, Y. Zhang, B. Tang, Q. Liu, H. Xu, X. Ma, X. Wang, Y. Li, H. Yin and 5 other author(s). Sci. China Inf. Sci., 63 (2): 129403 (2020)Investigation on Contacts Thermal Stability for 3D Sequential Integration.S. Mao, J. Liu, Y. Wang, W. Liu, Y. Hu, H. Cui, R. Zhang, H. Liu, Z. Wang, N. Zhou and 10 other author(s). IRPS, page 37-1. IEEE, (2022)Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.Z. Gao, T. Xin, C. Liu, Y. Xu, Y. Wang, Y. Zheng, R. Wang, X. Li, Y. Zheng, K. Du and 11 other author(s). IRPS, page 1-5. IEEE, (2024)Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.Z. Zhang, G. Tian, J. Huo, F. Zhang, Q. Zhang, G. Xu, Z. Wu, Y. Cheng, Y. Liu, and H. Yin. Sci. China Inf. Sci., (October 2023)Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.B. Li, Y. Huang, J. Wu, Y. Huang, B. Li, Q. Zhang, L. Yang, F. Wan, J. Luo, Z. Han and 1 other author(s). Microelectron. Reliab., (2018)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.L. Zhou, Q. Zhang, H. Yang, Z. Ji, Z. Zhang, R. Xu, H. Yin, and W. Wang. IRPS, page 1-6. IEEE, (2020)Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.Z. Zhang, G. Zhan, W. Gan, Y. Cheng, X. Zhang, Y. Peng, J. Tang, F. Zhang, J. Huo, G. Xu and 9 other author(s). Adv. Intell. Syst., (November 2023)

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Disambiguation of "Yin, Huaxiang"

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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Sheng Yin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Yin, Huaxiang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Please choose a person to relate this publication to

Lu Yin

Renfu Yin

Li Yin

Zhihong Yin

Sheng Yin

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
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APA
Chicago
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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.